Tests of a prototype for the silicon tracking system of the ILD concept Hänsel, S.; Bergauer, T.; Dragicevic, M. ...
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment,
02/2011, Letnik:
628, Številka:
1
Journal Article
Recenzirano
A very robust and redundant tracking system is needed to fully exploit the physics potential at the future International Linear Collider. The International Large Detector uses a combination of a TPC ...surrounded in the barrel region by three double layers of silicon strip sensors as tracking system. In November 2009 a first test beam, including both a Large TPC Prototype and a first prototype of the silicon layers, was performed at DESY, Hamburg. About 80,000 events were recorded using an electron beam with a momentum of 5.6
GeV/
c. The emphasis of this paper is on the silicon layers and their performance during the test beam. It presents first results from the data analysis and discusses possible future steps.
Strip detectors with an area of
16
cm
2
were processed on high resistivity n-type magnetic Czochralski silicon. In addition, detectors were processed on high resistivity Float Zone wafers with the ...same mask set for comparison. The detectors were irradiated to several different fluences up to the fluence of
3
×
10
15
1
MeV
n
eq
/
cm
2
with protons or with mixed protons and neutrons. The detectors were fully characterized with CV- and IV-measurements prior to and after the irradiation. The beam test was carried out at the CERN H2 beam line using a silicon beam telescope that determines the tracks of the incoming particles and hence provides a reference measurement for the detector characterization. The n-type MCz-Si strip detectors have an acceptable
S/N at least up to the fluence of
1
×
10
15
n
eq
/
cm
2
and thus, they are a feasible option for the strip detector layers in the SLHC tracking systems.
A heavily irradiated (3×10
15 1
MeV
n
eq/cm
2) Current Injected Detector (CID) was tested with 225
GeV muon beam at CERN H2 beam line. In the CID concept the current is limited by the space charge. ...The injected carriers will be trapped by the deep levels and this induces a stable electric field through the entire bulk regardless of the irradiation fluence the detector has been exposed to. The steady-state density of the trapped charge is defined by the balance between the trapping and the emission rates of charge carriers (detrapping). Thus, the amount of charge injection needed for the electric field stabilization depends on the temperature. AC-coupled 16
cm
2 detector was processed on high resistivity n-type magnetic Czochralski silicon, and it had 768 strips, 50
μm pitch, 10
μm strip width and 3.9
cm strip length. The beam test was carried out using a silicon beam telescope that is based on the CMS detector readout prototype components, APV25 readout chips, and eight strip sensors made by Hamamatsu having 60
μm pitch and intermediate strips. The tested CID detector was bonded to the APV25 readout, and it was operated at temperatures ranging from −40 to −53
°C. The CID detector irradiated at 3×10
15 1
MeV
n
eq/cm
2 fluence shows about 40% relative Charge Collection Efficiency with respect to the non-irradiated reference plane sensors.
Test results of monolithic active pixel sensors for charged particle tracking Gornushkin, Yu; Claus, G; de Boer, W ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment,
02/2002, Letnik:
478, Številka:
1
Journal Article, Conference Proceeding
Recenzirano
A new generation of semi-conducting pixel sensors for detecting minimum ionising particles (m.i.p.) was designed and first prototypes of Monolithic Active Pixel Sensors (MAPS), called MIMOSA,
2
2
...Standing for Minimum Ionising MOS Active pixel sensor.
were fabricated in a standard CMOS technology. The performances of the first prototypes were evaluated with high energy π
− beams and with an X-ray source in strong magnetic fields. The beam test results demonstrate that the sensors detect m.i.p.s with very high efficiency and signal-to-noise ratio and provide excellent spatial resolution. The influence of strong magnetic fields is observed to be modest.
An algorithm for calculating the Lorentz angle in silicon detectors Bartsch, V.; de Boer, W.; Bol, J. ...
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment,
02/2003, Letnik:
497, Številka:
2
Journal Article
Recenzirano
Odprti dostop
Future experiments will use silicon sensors in the harsh radiation environment of the Large Hadron Collider and high magnetic fields. The drift direction of the charge carriers is affected by the ...Lorentz force due to the high magnetic field. Also the resulting radiation damage changes the properties of the drift.
In this paper measurements of the Lorentz angle of electrons and holes before and after irradiation are reviewed and compared with a simple algorithm to compute the Lorentz angle.
Geant4 low energy extensions have been used to simulate the X-ray spectra of industrial X-ray tubes with filters for removing the uncertain low energy part of the spectrum in a controlled way. The ...results are compared with precisely measured X-ray spectra using a silicon drift detector. Furthermore, this paper shows how the different dose rates in silicon and silicon dioxide layers of an electronic device can be deduced from the simulations.
Lorentz angle measurements in silicon detectors Bartsch, V.; de Boer, W.; Bol, J. ...
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment,
02/2002, Letnik:
478, Številka:
1
Journal Article
Recenzirano
Odprti dostop
In this paper we study the Lorentz angles of both electrons and holes in magnetic fields up to
8
T and temperatures between 77 and
300
K. This is done before and after irradiating a detector with 21
...MeV protons up to a fluence of 10
13/cm
2, which is equivalent to ≈2.8×10
13/cm
2 1
MeV neutrons.
Measurements with a CMOS pixel sensor in magnetic fields de Boer, W; Bartsch, V; Bol, J ...
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment,
07/2002, Letnik:
487, Številka:
1
Journal Article
Recenzirano
CMOS technique, which is the standard process used by most of the semiconductor factories worldwide, allows the production of both cheap and highly integrated sensors. The prototypes MIMOSA
1
1
...MIMOSA: Minimum Ionizing particle MOS Active pixel sensor.
-I and MIMOSA-II were designed by the IReS–LEPSI collaboration in order to investigate the potential of this new technique for charged particle tracking (Design and Testing of Monolithic Active Pixel Sensors for Charged Particle Tracking, LEPSI, IN2P3, Strasbourg, France). For this purpose it is necessary to study the effects of magnetic fields as they appear in high-energy physics on these sensors.
Real-time dosimetry is a critical issue in most radiotherapy applications. Silicon Ultra fast Cameras for electron and gamma sources In Medical Applications (SUCIMA) is a project addressing the ...development of an imaging system of extended radioactive sources based on monolithic and hybrid position-sensitive silicon sensors, where “imaging” has to be intended as the record of a dose map. The detector characteristics are constrained by the main applications, namely brachytherapy and real-time monitoring of a hadron beam for oncology. The key issues in the sensor and DAQ development are described together with the most relevant medical applications. SUCIMA
1
1
E.C. Contract No. G1RD-CT-2001-00561.
is a project approved by the EC within the V Framework Program.
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