Nanoscale magnetic tunnel junctions play a pivotal role in magnetoresistive random access memories. Successful implementation depends on a simultaneous achievement of low switching current for the ...magnetization switching by spin transfer torque and high thermal stability, along with a continuous reduction of junction size. Perpendicular easy-axis CoFeB/MgO stacks possessing interfacial anisotropy have paved the way down to 20-nm scale, below which a new approach needs to be explored. Here we show magnetic tunnel junctions that satisfy the requirements at ultrafine scale by revisiting shape anisotropy, which is a classical part of magnetic anisotropy but has not been fully utilized in the current perpendicular systems. Magnetization switching solely driven by current is achieved for junctions smaller than 10 nm where sufficient thermal stability is provided by shape anisotropy without adopting new material systems. This work is expected to push forward the development of magnetic tunnel junctions toward single-digit nm-scale nano-magnetics/spintronics.
Electrical control of magnetic properties is crucial for device applications in the field of spintronics. Although the magnetic coercivity or anisotropy has been successfully controlled electrically ...in metals as well as in semiconductors, the electrical control of Curie temperature has been realized only in semiconductors at low temperature. Here, we demonstrate the room-temperature electrical control of the ferromagnetic phase transition in cobalt, one of the most representative transition-metal ferromagnets. Solid-state field effect devices consisting of a ultrathin cobalt film covered by a dielectric layer and a gate electrode were fabricated. We prove that the Curie temperature of cobalt can be changed by up to 12 K by applying a gate electric field of about ±2 MV cm(-1). The two-dimensionality of the cobalt film may be relevant to our observations. The demonstrated electric field effect in the ferromagnetic metal at room temperature is a significant step towards realizing future low-power magnetic applications.
Abstract
The ability to represent information using an antiferromagnetic material is attractive for future antiferromagnetic spintronic devices. Previous studies have focussed on the utilization of ...antiferromagnetic materials with biaxial magnetic anisotropy for electrical manipulation. A practical realization of these antiferromagnetic devices is limited by the requirement of material-specific constraints. Here, we demonstrate current-induced switching in a polycrystalline PtMn/Pt metallic heterostructure. A comparison of electrical transport measurements in PtMn with and without the Pt layer, corroborated by x-ray imaging, reveals reversible switching of the thermally-stable antiferromagnetic Néel vector by spin-orbit torques. The presented results demonstrate the potential of polycrystalline metals for antiferromagnetic spintronics.
The spin transfer torque is essential for electrical magnetization switching. When a magnetic domain wall is driven by an electric current through an adiabatic spin torque, the theory predicts a ...threshold current even for a perfect wire without any extrinsic pinning. The experimental confirmation of this 'intrinsic pinning', however, has long been missing. Here, we give evidence that this intrinsic pinning determines the threshold, and thus that the adiabatic spin torque dominates the domain wall motion in a perpendicularly magnetized Co/Ni nanowire. The intrinsic nature manifests itself both in the field-independent threshold current and in the presence of its minimum on tuning the wire width. The demonstrated domain wall motion purely due to the adiabatic spin torque will serve to achieve robust operation and low energy consumption in spintronic devices.
Controlling the displacement of a magnetic domain wall is potentially useful for information processing in magnetic non-volatile memories and logic devices. A magnetic domain wall can be moved by ...applying an external magnetic field and/or electric current, and its velocity depends on their magnitudes. Here we show that the applying an electric field can change the velocity of a magnetic domain wall significantly. A field-effect device, consisting of a top-gate electrode, a dielectric insulator layer, and a wire-shaped ferromagnetic Co/Pt thin layer with perpendicular anisotropy, was used to observe it in a finite magnetic field. We found that the application of the electric fields in the range of ± 2-3 MV cm(-1) can change the magnetic domain wall velocity in its creep regime (10(6)-10(3) m s(-1)) by more than an order of magnitude. This significant change is due to electrical modulation of the energy barrier for the magnetic domain wall motion.
Current-induced magnetic domain wall motion is attractive for manipulating magnetization direction in spintronics devices, which open a new era of electronics. Up to now, in spite of a crucial ...significance to applications, investigation on a current-induced domain wall depinning probability, especially in sub-nano to a-few-nanosecond range has been lacking. Here we report on the probability of the depinning in perpendicularly magnetized Co/Ni nanowires in this timescale. A high depinning probability was obtained even for 2-ns pulses with a current density of less than 10¹² A m⁻². A one-dimensional Landau-Lifshitz-Gilbert calculation taking into account thermal fluctuations reproduces well the experimental results. We also calculate the depinning probability as functions of various parameters and found that parameters other than the coercive field do not affect the transition width of the probability. These findings will allow one to design high-speed and reliable magnetic devices based on the domain wall motion.
•Magnetization processes and magnetic domain structures in Ta/CoFeB(1.24–1.6 nm)/MgO.•polar magneto-optical Kerr effect magnetometry and microscopy were used.•Magnetization reversal of domains ...structures with narrow stripes.•Magnetization after-effect described by Barkhausen length was studied.•Thickness dependence of magnetic anisotropy constants were determined.
Magnetization processes and magnetic domain structures in Ta/CoFeB/MgO stacks were studied in a series of samples with various CoFeB thicknesses d ranging from 1.24 to 1.60 nm with a step of 0.04 nm, using polar magneto-optical Kerr effect (PMOKE) magnetometry and microscopy. Thickness dependence of the magnetic anisotropy was evaluated and the first and second order anisotropy constants were quantified for each thickness. Accordingly, this dependence was deduced to result in magnetization reorientation from out-of-plane to in-plane through an easy-cone magnetization region (1.39 nm ≤ d ≤ 1.41 nm) as d was increased. PMOKE imaging of the magnetization reversal processes for stacks with out-of-plane easy axis indicated both a significant increase of the density of nucleation centers and a change in domain morphology with increasing d up to the magnetization reorientation thickness. Magnetization reversal dynamics was described by a thermal activation model consistent with a Barkhausen length of about 120 nm. The thinnest films with d = 1.24 and 1.28 nm exhibited straightened narrow stripe domains resulting from magnetic dipolar repulsion. A thorough study of narrow stripe domains was performed via direct and indirect magnetization reversal processes. The application of such structures as spin wave nano-channels could be promising.
Controlling the position of a magnetic domain wall with electric current may allow for new types of non-volatile memory and logic devices. To be practical, however, the threshold current density ...necessary for domain wall motion must be reduced below present values. Intrinsic pinning due to magnetic anisotropy, as recently observed in perpendicularly magnetized Co/Ni nanowires, has been shown to give rise to an intrinsic current threshold J(th)(0). Here, we show that domain wall motion can be induced at current densities 40% below J(th)(0) when an external magnetic field of the order of the domain wall pinning field is applied. We observe that the velocity of the domain wall motion is the vector sum of current- and field-induced velocities, and that the domain wall can be driven against the direction of a magnetic field as large as 2,000 Oe, even at currents below J(th)(0). We show that this counterintuitive phenomenon is triggered by Walker breakdown, and that the additive velocities provide a unique way of simultaneously determining the spin polarization of current and the Gilbert damping constant.
The Hedgehog (Hh) signaling pathway has critical functions during embryogenesis of both invertebrate and vertebrate species 1; defects in this pathway in humans can cause developmental disorders as ...well as neoplasia 2. Although the Gli1, Gli2, and Gli3 zinc finger proteins are known to be effectors of Hh signaling in vertebrates, the mechanisms regulating activity of these transcription factors remain poorly understood 3,4. In Drosophila, activity of the Gli homolog Cubitus interruptus (Ci) is likely to be modulated by its interaction with a cytoplasmic complex containing several other proteins 5,6, including Costal2, Fused (Fu), and Suppressor of fused (Su(fu)), the last of which has been shown to interact directly with Ci 7. We have cloned mouse Suppressor of fused (mSu(fu)) and detected its 4.5 kb transcript throughout embryogenesis and in several adult tissues. In cultured cells, mSu(fu) overexpression inhibited transcriptional activation mediated by Sonic hedgehog (Shh), Gli1 and Gli2. Co-immunoprecipitation of epitope-tagged proteins indicated that mSu(fu) interacts with Gli1, Gli2, and Gli3, and that the inhibitory effects of mSu(fu) on Gli1's transcriptional activity were mediated through interactions with both amino- and carboxy-terminal regions of Gli1. Gli1 was localized primarily to the nucleus of both HeLa cells and the Shh-responsive cell line MNS-70; co-expression with mSu(fu) resulted in a striking increase in cytoplasmic Gli1 immunostaining. Our findings indicate that mSu(fu) can function as a negative regulator of Shh signaling and suggest that this effect is mediated by interaction with Gli transcription factors.
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