In this paper we report on the timing resolution obtained in a beam test with pions of 180 GeV/c momentum at CERN for the first production of 45 μm thick Ultra-Fast Silicon Detectors (UFSD). UFSD are ...based on the Low- Gain Avalanche Detector (LGAD) design, employing n-on-p silicon sensors with internal charge multiplication due to the presence of a thin, low-resistivity diffusion layer below the junction. The UFSD used in this test had a pad area of 1.7 mm2. The gain was measured to vary between 5 and 70 depending on the sensor bias voltage. The experimental setup included three UFSD and a fast trigger consisting of a quartz bar readout by a SiPM. The timing resolution was determined by doing Gaussian fits to the time-of-flight of the particles between one or more UFSD and the trigger counter. For a single UFSD the resolution was measured to be 34 ps for a bias voltage of 200 V, and 27 ps for a bias voltage of 230 V. For the combination of 3 UFSD the timing resolution was 20 ps for a bias voltage of 200 V, and 16 ps for a bias voltage of 230 V.
Ultra-fast silicon detectors (UFSD) Sadrozinski, H.F.-W.; Anker, A.; Chen, J. ...
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment,
09/2016, Letnik:
831, Številka:
C
Journal Article
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We report on measurements on Ultra-Fast Silicon Detectors (UFSD) which are based on Low-Gain Avalanche Detectors (LGAD). They are n-on-p sensors with internal charge multiplication due to the ...presence of a thin, low-resistivity diffusion layer below the junction, obtained with a highly doped implant. We have performed several beam tests with LGAD of different gain and report the measured timing resolution, comparing it with laser injection and simulations. For the 300μm thick LGAD, the timing resolution measured at test beams is 120ps while it is 57ps for IR laser, in agreement with simulations using Weightfield2. For the development of thin sensors and their readout electronics, we focused on the understanding of the pulse shapes and point out the pivotal role the sensor capacitance plays.
The SAMpler for PICosecond time (SAMPIC) chip has been designed by a collaboration including CEA/IRFU/SEDI, Saclay and CNRS/LAL/SERDI, Orsay. It benefits from both the quick response of a time to ...digital converter and the versatility of a waveform digitizer to perform accurate timing measurements. Thanks to the sampled signals, smart algorithms making best use of the pulse shape can be used to improve time resolution. A software framework has been developed to analyse the SAMPIC output data and extract timing information by using either a constant fraction discriminator or a fast cross-correlation algorithm. SAMPIC timing capabilities together with the software framework have been tested using pulses generated by a signal generator or by a silicon detector illuminated by a pulsed infrared laser. Under these ideal experimental conditions, the SAMPIC chip has proven to be capable of timing resolutions down to 4ps with synthesized signals and 40ps with silicon detector signals.
Tracking in 4 dimensions Cartiglia, N.; Arcidiacono, R.; Baldassarri, B. ...
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment,
02/2017, Letnik:
845, Številka:
C
Journal Article
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Odprti dostop
In this contribution we will review the progresses toward the construction of a tracking system able to measure the passage of charged particles with a combined precision of ∼10ps and ∼10μm, either ...using a single type of sensor, able to concurrently measure position and time, or a combination of position and time sensors.
RF strip-line anodes for Psec large-area MCP-based photodetectors Grabas, Hervé; Obaid, Razib; Oberla, Eric ...
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment,
2013, Letnik:
711
Journal Article
Recenzirano
We have designed and tested economical large-area RF strip-line anodes made by silk-screening silver onto inexpensive plate glass, for use in microchannel plate photodetectors to provide measurements ...of time, position, integrated charge, and pulse waveform shapes. The 229-mm-long anodes are modular, and can be attached in series for economy in electronics channel-count. Measurements of the anode impedance, bandwidth and cross-talk due to inter-strip coupling are presented. The analog bandwidth, a key determinant of timing resolution, decreases from 1.6GHz to 0.4GHz as the anode length increases from 289mm to 916mm.
Study of CMOS strip sensor for future silicon tracker Han, Y.; Zhu, H.; Affolder, A. ...
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment,
08/2020, Letnik:
981
Journal Article
Recenzirano
Odprti dostop
Monolithic silicon sensors developed with High-Voltage CMOS (HV-CMOS) processes have become highly attractive for charged particle tracking. Compared with the standard CMOS sensors, HV-CMOS sensors ...can provide larger and deeper depletion regions that lead to larger signals and faster charge collection. They can provide high position resolution, low material budget, high radiation hardness and low cost that are desirable for high performance tracking in harsh collision environment. Various studies have been conducted to explore the technology feasibility for the large-area tracking systems at future collider experiments. CHESS (CMOS HV/HR Evaluation for Strip Sensor) sensor series have been developed as an alternative solution to the conventional silicon micro-strip detectors for the ATLAS inner tracker upgrade. The first prototype (named CHESS1) was to evaluate the diode geometry and the in-pixel analog electronics. Obtained test results were used to optimize the second prototype (named CHESS2). CHESS2 was implemented with a full digital readout architecture and realized as a full reticle sized monolithic sensor. Here, the basic characteristics of the CHESS2 prototype sensors and their performance in response to different input signals are presented.
ATLAS has formed strip CMOS project to study the use of CMOS MAPS devices as silicon strip sensors for the Phase-II Strip Tracker Upgrade. This choice of sensors promises several advantages over the ...conventional baseline design, such as better resolution, less material in the tracking volume, and faster construction speed. At the same time, many design features of the sensors are driven by the requirement of minimizing the impact on the rest of the detector. Hence the target devices feature long pixels which are grouped to form a virtual strip with binary-encoded z position. The key performance aspects are radiation hardness compatibility with HL-LHC environment, as well as extraction of the full hit position with full-reticle readout architecture. To date, several test chips have been submitted using two different CMOS technologies. The AMS 350nm is a high voltage CMOS process (HV-CMOS), that features the sensor bias of up to 120V. The TowerJazz 180nm high resistivity CMOS process (HR-CMOS) uses a high resistivity epitaxial layer to provide the depletion region on top of the substrate. We have evaluated passive pixel performance, and charge collection projections. The results strongly support the radiation tolerance of these devices to radiation dose of the HL-LHC in the strip tracker region. We also describe design features for the next chip submission that are motivated by our technology evaluation.