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  • The Great Observatories All... The Great Observatories All-Sky LIRG Survey: Herschel Image Atlas and Aperture Photometry
    Chu, Jason K; Sanders, D B; Larson, K L ... The Astrophysical journal. Supplement series, 04/2017, Letnik: 229, Številka: 2
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    Far-infrared images and photometry are presented for 201 Luminous and Ultraluminous Infrared Galaxies LIRGs: log (L sub(IR)/L sub(middot in circle)) = 11.00-11.99, ULIRGs: log (L sub(IR)/L sub(middot ...
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  • Observation of reactor anti... Observation of reactor antineutrino disappearance using delayed neutron capture on hydrogen at RENO
    Shin, C. D.; Atif, Z.; Bak, G. ... The journal of high energy physics, 04/2020, Letnik: 2020, Številka: 4
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    A bstract The Reactor Experiment for Neutrino Oscillation (RENO) experiment has been taking data using two identical liquid scintillator detectors since August 2011. The experiment has observed the ...
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  • Spitzer Quasar and Ulirg Ev... Spitzer Quasar and Ulirg Evolution Study (QUEST). IV. Comparison of 1 Jy Ultraluminous Infrared Galaxies with Palomar-Green Quasars
    Veilleux, S; Rupke, D. S. N; Kim, D.-C ... The Astrophysical journal. Supplement series, 06/2009, Letnik: 182, Številka: 2
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    ABSTRACT We report the results from a comprehensive study of 74 ultraluminous infrared galaxies (ULIRGs) and 34 Palomar-Green (PG) quasars within z ∼ 0.3 observed with the Spitzer Infrared ...
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  • Direct evidence for dominan... Direct evidence for dominant bond-directional interactions in a honeycomb lattice iridate Na2IrO3
    Hwan Chun, Sae; Kim, Jong-Woo; Kim, Jungho ... Nature physics, 05/2015, Letnik: 11, Številka: 6
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    Heisenberg interactions are ubiquitous in magnetic materials and play a central role in modelling and designing quantum magnets. Bond-directional interactions offer a novel alternative to Heisenberg ...
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  • Two Series Oxide Resistors ... Two Series Oxide Resistors Applicable to High Speed and High Density Nonvolatile Memory
    Lee, M.-J.; Park, Y.; Suh, D.-S. ... Advanced materials (Weinheim), 11/2007, Letnik: 19, Številka: 22
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    A memory cell consisting of a Pt/VO2/Pt switch element and a Pt/NiO/Pt memory element connected in series. By applying a voltage higher than Vth of 0.6 V, the switch element reaches the on state and ...
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