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  • Estimation of Threshold Vol... Estimation of Threshold Voltage in SiC Short-Channel MOSFETs
    Tachiki, Keita; Ono, Takahisa; Kobayashi, Takuma ... IEEE transactions on electron devices, 2018-July, 2018-7-00, Letnik: 65, Številka: 7
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    In this brief, the influence of high-density traps at the SiO 2 /SiC interface on short-channel effects was investigated, and a model describing channel length dependence of the threshold voltage ...
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  • Toxicological effects of tw... Toxicological effects of two metabolites derived from o-toluidine and o-anisidine after 28-day oral administration to rats
    Toyoda, Takeshi; Kobayashi, Takuma; Miyoshi, Noriyuki ... Journal of toxicological sciences, 2022, 2022-00-00, 20220101, Letnik: 47, Številka: 11
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    Although both o-toluidine and o-anisidine are known as aromatic amines with bladder carcinogenicity, the specific metabolites involved in carcinogenesis are still unclear. Here, we examined the ...
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  • Design of SiO2/4H–SiC MOS i... Design of SiO2/4H–SiC MOS interfaces by sputter deposition of SiO2 followed by high-temperature CO2-post deposition annealing
    Kil, Tae-Hyeon; Kobayashi, Takuma; Shimura, Takayoshi ... AIP advances, 11/2023, Letnik: 13, Številka: 11
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    Oxidation of silicon carbide (SiC) is known to induce defects at the interface of the SiO2/SiC system. NO-annealing is a standard industrial method of nitridation, but oxidation may progress during ...
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  • Deep learning-based noise reduction for coronary CT angiography: using four-dimensional noise-reduction images as the ground truth
    Kobayashi, Takuma; Nishii, Tatsuya; Umehara, Kensuke ... Acta radiologica (1987), 05/2023, Letnik: 64, Številka: 5
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    To assess low-contrast areas such as plaque and coronary artery stenosis, coronary computed tomography angiography (CCTA) needs to provide images with lower noise without increasing radiation doses. ...
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