In this brief, we propose a novel level shifter circuit that is capable of converting subthreshold to above-threshold signal levels. In contrast to other existing implementations, it does not require ...a static current flow and can therefore offer considerable static power savings. The circuit has been optimized and simulated in a 90-nm process technology. It operates correctly across process corners for supply voltages from 100 mV to 1 V on the low-voltage side. At the target design voltage of 200 mV, the level shifter has a propagation delay of 18.4 ns and a static power dissipation of 6.6 nW. For a 1-MHz input signal, the total energy per transition is 93.9 fJ. Simulation results are compared to an existing subthreshold to above-threshold level shifter implementation from the paper of Chen et al.
An energy-efficient SoC with 32 b subthreshold RISC processor cores, 32 kB conventional cache memory, and 9T ultra-low voltage (ULV) SRAM based on a flexible and extensible architecture was ...fabricated on a 2.7 mm 2 test chip in 65 nm low power CMOS. The processor cores are based on a custom standard cell library that was designed using a multiobjective approach to optimize noise margins, switching energy, and propagation delay simultaneously. The cores operate over a supply voltage range from 200 mV (best samples) to 1.2 V with clock frequencies from 10 kHz to 94 MHz at room temperature. The lowest energy consumption per cycle of 9.94 pJ is observed at 325 mV and 133 kHz. A 2 kb ULV SRAM macro achieves minimum energy per operation at averages of 321 mV (0.030 σ/μ), 567 fJ (0.037 σ/μ), and 730 kHz (0.184 σ/μ), for equal number of 32 b read/write operations. The off-chip performance and power management subsystem provides dynamic voltage and frequency scaling (DVFS) combined with an adaptive supply voltage generation for dynamic PVT compensation.
