Timing performance of small cell 3D silicon detectors Kramberger, G.; Cindro, V.; Flores, D. ...
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment,
08/2019, Letnik:
934
Journal Article
Recenzirano
A silicon 3D detector with a single cell of 50 × 50 μm2 was produced and evaluated for timing applications. The measurements of time resolution were performed for 90Sr electrons with dedicated ...electronics used also for determining time resolution of Low Gain Avalanche Detectors (LGADs). The measurements were compared to those with LGADs and also simulations. The studies showed that the dominant contribution to the timing resolution comes from the time walk originating from different induced current shapes for hits over the cell area. This contribution decreases with higher bias voltages, lower temperatures and smaller cell sizes. It is around 30 ps for a 3D detector of 50 × 50 μm2 cell at 150 V and −20 °C, which is comparable to the time walk due to Landau fluctuations in LGADs. It even improves for inclined tracks and larger pads composed of multiple cells. A good agreement between measurements and simulations was obtained, thus validating the simulation results.
In this paper we report on the timing resolution obtained in a beam test with pions of 180 GeV/c momentum at CERN for the first production of 45 μm thick Ultra-Fast Silicon Detectors (UFSD). UFSD are ...based on the Low- Gain Avalanche Detector (LGAD) design, employing n-on-p silicon sensors with internal charge multiplication due to the presence of a thin, low-resistivity diffusion layer below the junction. The UFSD used in this test had a pad area of 1.7 mm2. The gain was measured to vary between 5 and 70 depending on the sensor bias voltage. The experimental setup included three UFSD and a fast trigger consisting of a quartz bar readout by a SiPM. The timing resolution was determined by doing Gaussian fits to the time-of-flight of the particles between one or more UFSD and the trigger counter. For a single UFSD the resolution was measured to be 34 ps for a bias voltage of 200 V, and 27 ps for a bias voltage of 230 V. For the combination of 3 UFSD the timing resolution was 20 ps for a bias voltage of 200 V, and 16 ps for a bias voltage of 230 V.
Radiation hardness of thin Low Gain Avalanche Detectors Kramberger, G.; Carulla, M.; Cavallaro, E. ...
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment,
05/2018, Letnik:
891
Journal Article
Recenzirano
Low Gain Avalanche Detectors (LGAD) are based on a n++-p+-p-p++ structure where an appropriate doping of the multiplication layer (p+) leads to high enough electric fields for impact ionization. Gain ...factors of few tens in charge significantly improve the resolution of timing measurements, particularly for thin detectors, where the timing performance was shown to be limited by Landau fluctuations. The main obstacle for their operation is the decrease of gain with irradiation, attributed to effective acceptor removal in the gain layer. Sets of thin sensors were produced by two different producers on different substrates, with different gain layer doping profiles and thicknesses (45, 50 and 80 μm). Their performance in terms of gain/collected charge and leakage current was compared before and after irradiation with neutrons and pions up to the equivalent fluences of 5⋅1015 cm−2. Transient Current Technique and charge collection measurements with LHC speed electronics were employed to characterize the detectors. The thin LGAD sensors were shown to perform much better than sensors of standard thickness (∼300 μm) and offer larger charge collection with respect to detectors without gain layer for fluences <2⋅1015 cm−2. Larger initial gain prolongs the beneficial performance of LGADs. Pions were found to be more damaging than neutrons at the same equivalent fluence, while no significant difference was found between different producers. At very high fluences and bias voltages the gain appears due to deep acceptors in the bulk, hence also in thin standard detectors.
The edge transient-current technique (Edge-TCT) and charge-collection measurements with passive test structures made with the LFoundry 150-nm CMOS process on a p-type substrate with an initial ...resistivity of over 3 kΩcm are presented. The measurements were made before and after irradiation with reactor neutrons up to 2⋅1015 neq/cm2. Two sets of devices were investigated: unthinned (700 μm) with the substrate biased through the implant on top and thinned (200 μm) with a processed and metallised backplane.
The depletion depth was estimated with the Edge-TCT and the collected charge was measured with a 90Sr source using an external amplifier having a 25-ns shaping time. The depletion depth for a given bias voltage decreased with the increasing neutron fluence, but it was still larger than 70 μm at 250 V after the highest fluence. After irradiation a much higher collected charge was measured for the thinned detectors with a processed backplane compared to the unthinned devices, although the same or an even larger depletion depth was measured in the unthinned devices. The most probable value of the collected charge of over 5000 electrons was measured with a thinned device also after irradiation to 2⋅1015 neq/cm2. This is sufficient to ensure the successful operation of these detectors at the outer layer of the pixel detector in the ATLAS experiment at the upgraded HL-LHC.
A Transient Current Technique (TCT) utilizing an IR laser with 100 ps pulse width and beam diameter of FWHM = 8 μm was used to evaluate non-irradiated and irradiated p-type silicon micro-strip ...detectors. The beam was parallel with the surface and perpendicular to the strips (Edge-TCT) so that the electron hole pairs were created at known depth in the detector. Induced current pulses were measured in one of the strips. The pulse shapes were analyzed in a new way, which does not require the knowledge of effective trapping times, to determine drift velocity, charge collection and electric field profiles in heavily irradiated silicon detectors. The profiles were studied at different laser beam positions (depth of carrier generation), voltages and fluences up to 5·10 15 neutrons cm -2 . A strong evidence for charge multiplication at high voltages was found with the detector irradiated to the highest fluence.
A special metallization pattern was created on a single crystalline diamond detector aimed at creating high enough electric field for impact ionization in the detector material. Electric field line ...focusing through electrode design and very high bias voltages were used to obtain high electric fields. Previous measurements and theoretical calculations indicated that drifting charge multiplication by impact ionization could take place. A large increase of induced charge was observed for the smallest dot electrode which points to charge multiplication while for the large dot and pad detector structure no such effect was observed. The evolution of induced currents was also monitored with the transient current technique. Induced current pulses with duration of order 1μs were measured. The multiplication gain was found to depend on the particle rate.
Abstract
The Cherenkov Telescope Array Observatory (CTAO), currently under construction, is the next-generation very-high-energy gamma-ray observatory, providing the coverage for photons in the ...energy range 20GeV to 300TeV. CTAO will increase detection sensitivity in the 100 GeV to 10TeV range by a factor of 5 — 10 with respect to present experiments. CTAO retrieves the properties of very-high-energy gamma-rays by measuring Cherenkov light emitted by atmospheric showers of secondary particles that incident gamma rays produce in upper layers of the atmosphere. The key for reaching the required energy measurement accuracy is a precise knowledge of the atmospheric transmittance for Cherenkov light, which can be obtained using a dedicated Raman LIDAR. The device should operate at 355nm (near the maximum of Cherenkov light spectrum) and have the capability of taking data at specific azimuth and zenith angles up to distances of 30 km, so that atmospheric transmission along all possible air-shower directions can be determined. The
Barcelona Raman LIDAR
(BRL) is the official CTAO Pathfinder prototype, developed for atmospheric characterization of the Northern CTAO Site at the Observatorio del Roque de los Muchachos (ORM) on the Canary island of La Palma. BRL was deployed at ORM for extensive on-field tests between February 2021 and May 2022. We report on the commissioning results, including the remote operation capabilities of the system and its contribution to the understanding of atmospheric phenomena during its deployment period. In particular, we report on the properties of the volcanic plume from the eruption of the Cumbre Vieja volcano on 22 September 2021.
Next generation Low Gain Avalanche Diodes (LGAD) produced by Hamamatsu photonics (HPK) and Fondazione Bruno Kessler (FBK) were tested before and after irradiation with ~1MeV neutrons at the JSI ...facility in Ljubljana. Sensors were irradiated to a maximum 1-MeV equivalent fluence of 2.5E15 N
eq
/cm
2
. The sensors analysed in this paper are an improvement after the lessons learned from previous FBK and HPK productions that were already reported in precedent papers. The gain layer of HPK sensors was fine-tuned to optimize the performance before and after irradiation. FBK sensors instead combined the benefit of Carbon infusion and deep gain layer to further the radiation hardness of the sensors and reduced the bulk thickness to enhance the timing resolution. The sensor performance was measured in charge collection studies using β-particles from a 90Sr source and in capacitance-voltage scans (C-V) to determine the bias to deplete the gain layer. The collected charge and the timing resolution were measured as a function of bias voltage at -30C. Finally a correlation is shown between the bias voltage to deplete the gain layer and the bias voltage needed to reach a certain amount of gain in the sensor. HPK sensors showed a better performance before irradiation while maintaining the radiation hardness of the previous production. FBK sensors showed exceptional radiation hardness allowing a collected charge up to 10 fC and a time resolution of 40 ps at the maximum fluence.
PDF
