The Compact Linear Collider (CLIC) is an option for a future
e
+
e
-
collider operating at centre-of-mass energies up to
3
TeV
, providing sensitivity to a wide range of new physics phenomena and ...precision physics measurements at the energy frontier. This paper is the first comprehensive presentation of the Higgs physics reach of CLIC operating at three energy stages:
s
=
350
GeV
, 1.4 and
3
TeV
. The initial stage of operation allows the study of Higgs boson production in Higgsstrahlung (
e
+
e
-
→
Z
H
) and
W
W
-fusion (
e
+
e
-
→
H
ν
e
ν
¯
e
), resulting in precise measurements of the production cross sections, the Higgs total decay width
Γ
H
, and model-independent determinations of the Higgs couplings. Operation at
s
>
1
TeV
provides high-statistics samples of Higgs bosons produced through
W
W
-fusion, enabling tight constraints on the Higgs boson couplings. Studies of the rarer processes
e
+
e
-
→
t
t
¯
H
and
e
+
e
-
→
H
H
ν
e
ν
¯
e
allow measurements of the top Yukawa coupling and the Higgs boson self-coupling. This paper presents detailed studies of the precision achievable with Higgs measurements at CLIC and describes the interpretation of these measurements in a global fit.
We present a High Voltage (HV) CMOS particle pixel sensor with pixel electronics based on a high dynamic range integrator. The application is beam monitoring at an ion beam therapy facility. The test ...sensor chip has been implemented in an180 nm HV-CMOS technology with a high resistivity substrate. Readout electronics are implemented on-chip and sensing elements formed by n in p substrate. Beam test and lab measurements are presented.
Particle pixel detectors in standard high-voltage CMOS technology are a new detector family that allows implementation of low-cost radiation-tolerant detectors with good time resolution. In order to ...test the concept we have implemented three detector variants. The first variant uses simple four-transistor pixel electronics that allows the rolling-shutter readout. The second variant implements complex CMOS pixel electronics with particle hit detection on pixel level and binary readout. The third variant uses the readout based on the capacitive chip-to-chip signal transmission.
In this paper we will present the recent experimental results.
A large monolithic particle pixel-detector implemented as system on a chip in a high-voltage
0.35
μ
m
CMOS technology will be presented. The detector uses high-voltage n-well/p-substrate diodes as ...pixel-sensors. The diodes can be reversely biased with more than 60
V. In this way, depleted zones of about
10
μ
m
thickness are formed, where the signal charges can be collected by drift. Due to fast charge collection in the strong electric-field zones, a higher radiation tolerance of the sensor is expected than in the case of the standard MAPS detectors. Simple pixel-readout electronics are implemented inside the n-wells. The readout is based on a source follower with one select- and two reset-transistors. Due to embedding of the pixel-readout electronics inside the collecting electrodes (n-wells) there are no insensitive zones within the pixel matrix. The detector chip contains a 128×128 matrix consisting of pixels of
21
×
21
μ
m
2
-size. The diode voltages of one selected pixel-row are received at the bottom of the matrix by 128 eight-bit single-slope ADCs. All ADCs operate in parallel. The ADC codes are read out using eight LVDS 500
MBit/s output links. The readout electronics are designed to allow the readout of the whole pixel matrix in less than
50
μ
s
. The total DC power consumption of the chip is 50
mW. All analog parts of the chip are implemented using radiation-hard layout techniques. Experimental results will be presented.
Golden standard of acute stroke treatment is recanalisation therapy. However, opening the occluded blood vessel sometimes does not show the expected clinical result or leads to haemorrhagic ...complications. As neuroinflammation and neurotoxicity play an important role in the pathophysiology of stroke, neuroprotective agents might preserve brain tissue after futile recanalisation.
After recanalisation therapy and not later than 24 h after symptoms onset, patients with initial NIHSS of ≥ 8 were assigned to the investigational and control group. The investigational group received intravenous Cerebrolysin as add-on therapy. The primary objective was to assess the clinical efficacy of Cerebrolysin. The secondary objective was to investigate its effect on haemorrhagic transition and to confirm its safety profile.
Baseline characteristics of patients showed no significant differences between the two groups. No difference could be detected between the two groups in the mRS scale though the Cerebrolysin group showed descriptive superiority over the control group. We found a statistically significant difference considering haemorrhagic transition and mortality rate in favour of the Cerebrolysin group.
The multimodal neurotrophic agent Cerebrolysin holds promise to impact on the late consequences of a reperfusion syndrome. Its influence on reducing neuroinflammation, promoting neuronal cell viability and neurogenesis as well as the stabilising effect on the blood-brain barrier suggests a protective effect on the neurovascular unit even when no recanalisation occurs. We confirmed the excellent safety profile of Cerebrolysin.
Cerebrolysin as add-on therapy might be beneficial and safe for patients with acute stroke in terms of lowering risk for haemorrhagic complications after recanalisation therapy.
•Recanalisation therapy is golden standard of acute stroke treatment.•Neuroprotective agents might preserve brain tissue after futile recanalization.•Cerebrolysine as a multimodal neurotrophic agent can impact the late consequences of a reperfusion injury.•Cerebrolysin may reduce the risk for haemorrhagic complications after recanalisation therapy.
High-voltage CMOS detectors Ehrler, F.; Blanco, R.; Leys, R. ...
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment,
07/2016, Letnik:
824
Journal Article
Recenzirano
High-voltage CMOS (HVCMOS) pixel sensors are depleted active pixel sensors implemented in standard commercial CMOS processes. The sensor element is the n-well/p-substrate diode. The sensor ...electronics are entirely placed inside the n-well which is at the same time used as the charge collection electrode. High voltage is used to deplete the part of the substrate around the n-well. HVCMOS sensors allow implementation of complex in-pixel electronics. This, together with fast signal collection, allows a good time resolution, which is required for particle tracking in high energy physics. HVCMOS sensors will be used in Mu3e experiment at PSI and are considered as an option for both ATLAS and CLIC (CERN). Radiation tolerance and time walk compensation have been tested and results are presented.
•High-voltage CMOS sensors will be used in Mu3e experiment at PSI (Switzerland).•HVCMOS sensors are considered as an option for ATLAS (LHC/CERN) and CLIC (CERN).•Efficiency of more than 95% (99%) has been measured with (un-)irradiated chips.•The time resolution measured in the beam tests is nearly 100ns.•We plan to improve time resolution and efficiency by using high-resistive substrate.
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