The molecular beam epitaxy grown structures are investigated, comprising of InGaAs quantum wells (QW) separated by a thin InGaAlAs barrier from InAs quantum dots (QDs), emitting at 1.55 μm, grown on ...an InP substrate. To control the coupling between QW and QD parts the thickness of the barrier is changed, which commands the wave function overlap. The tuning of that parameter allows for the study of the influence of the QW potential on the energy structure of states and their wave functions in QDs, changing from an uncoupled system, where the optical response is just a sum of responses from two isolated elements, to a strongly quantum mechanically coupled system, exhibiting mixed 2D‐0D characteristics. The changes of the energy structure that are deduced from the photoreflectance and photoluminescence spectroscopy results, supported by 8‐band k · p modeling, explain the measured differences in the photoluminescence decay times between samples with different barrier thicknesses.
Hybrid quantum well‐quantum dot structures offer improved characteristics for laser devices, especially increased modulation speed, crucial for telecom applications; however, their energy structure must be carefully designed. It is shown here that for the investigated InAs/InAlGaAs/InP system the lowest lying hole states are confined in quantum well layer, making the ground state transition indirect in real space, which increases the photoluminescence decay time.
Magneto-optical parameters of trions in novel large and symmetric InP-based quantum dots, uncommon for molecular beam epitaxy-grown nanostructures, with emission in the third telecom window, are ...measured in Voigt and Faraday configurations of an external magnetic field. The diamagnetic coefficients are found to be in the range of 1.5-4 μeV/T
, and 8-15 μeV/T
, respectively out-of-plane and in-plane of the dots. The determined values of diamagnetic shifts are related to the anisotropy of dot sizes. Trion g-factors are measured to be relatively small, in the range of 0.3-0.7 and 0.5-1.3, in both configurations, respectively. Analysis of single carrier g-factors, based on the formalism of spin-correlated orbital currents, leads to similar values for hole and electron of ~0.25 for Voigt and g
≈ -5; g
≈ +6 for Faraday configuration of the magnetic field. Values of g-factors close to zero measured in Voigt configuration make the investigated dots promising for electrical tuning of the g-factor sign, required for schemes of single spin control in qubit applications.
Abstract
Novel methods for rapidly estimating single-photon source (SPS) quality have been promoted in recent literature to address the expensive and time-consuming nature of experimental validation ...via intensity interferometry. However, the frequent lack of uncertainty discussions and reproducible details raises concerns about their reliability. This study investigates the use of data augmentation, a machine learning technique, to supplement experimental data with bootstrapped samples and quantify the uncertainty of such estimates. Eight datasets obtained from measurements involving a single InGaAs/GaAs epitaxial quantum dot serve as a proof-of-principle example. Analysis of one of the SPS quality metrics derived from efficient histogram fitting of the synthetic samples, i.e. the probability of multi-photon emission events, reveals significant uncertainty contributed by stochastic variability in the Poisson processes that describe detection rates. Ignoring this source of error risks severe overconfidence in both early quality estimates and claims for state-of-the-art SPS devices. Additionally, this study finds that standard least-squares fitting is comparable to using a Poisson likelihood, and expanding averages show some promise for early estimation. Also, reducing background counts improves fitting accuracy but does not address the Poisson-process variability. Ultimately, data augmentation demonstrates its value in supplementing physical experiments; its benefit here is to emphasise the need for a cautious assessment of SPS quality.
Herein, it is demonstrated that optical excitation of InAs quantum dots (QDs) embedded directly in an InP matrix can be mediated via states in a quaternary compound constituting an InP/InGaAlAs ...bottom distributed Bragg reflector (DBR) and native defects in the InP matrix. It does not only change the carrier relaxation in the structure but could also lead to the imbalanced occupation of QDs with charge carriers, because the band structure favors the transfer of holes. Thermal activation of carrier transfer can be observed as an increase in the emission intensity versus temperature for excitation powers below saturation on the level of both an inhomogeneously broadened QD ensemble and single QD transitions. That increase in the QD emission is accompanied by a decrease in the emission from the InGaAlAs layer at low temperatures. Finally, carrier transfer between the InGaAlAs layer of the DBR and the InAs/InP QDs is directly proven by the photoluminescence excitation spectrum of the QD ensemble. The reported carrier transfer can increase the relaxation time of carriers into the QDs and thus be detrimental to the coherence properties of single and entangled photons. It is important to take it into account while designing QD‐based devices.
We investigate a hybrid system containing an In
Ga
As quantum well (QW), separated by a thin 2 nm In
Ga
Al
As barrier from 1.55 µm emitting InAs quantum dots (QDs), grown by molecular beam epitaxy on ...an InP substrate. Photoreflectance and photoluminescence (PL) spectroscopies are used to identify optical transitions in the system, with support of 8-band kp modelling. The main part of the work constitute the measurements and analysis of thermal quenching of PL for a set of samples with different QW widths (3-6 nm). Basing on Arrhenius plots, carrier escape channels from the dots are identified, pointing at the importance of carrier escape into the QW. A simple two level rate equations model is proposed and solved, exhibiting qualitative agreement with experimental observations. We show that for a narrow QW the escape process is less efficient than carrier supply via the QW due to the narrow barrier, resulting in improved emission intensity at room temperature. It proves that with carefully designed energy level structure, a hybrid QW/QD system can be used as an active region in telecom lasers with improved efficiencies.
In this work, we determine the temperature dependence of refractive indices of In 0.53 Al 0.1 Ga 0.37 As and Al 0.9 Ga 0.1 As semiconductor alloys at telecommunication wavelengths in the range from ...room temperature down to 10 K. For that, we measure the temperature-dependent reflectance of two structures: with an Al 0.9 Ga 0.1 As/GaAs distributed Bragg reflector (DBR) designed for 1.3 µm and with an In 0.53 Al 0.1 Ga 0.37 As/InP DBR designed for 1.55 µm. The obtained experimental results are compared to DBR reflectivity spectra calculated within the transfer matrix method to determine refractive index values. We further show that changes due to the thermal expansion of the DBR layers are negligible for our method.
Novel methods for rapidly estimating single-photon source (SPS) quality have been promoted in recent literature to address the expensive and time-consuming nature of experimental validation via ...intensity interferometry. However, the frequent lack of uncertainty discussions and reproducible details raises concerns about their reliability. This study investigates the use of data augmentation, a machine learning technique, to supplement experimental data with bootstrapped samples and quantify the uncertainty of such estimates. Eight datasets obtained from measurements involving a single InGaAs/GaAs epitaxial quantum dot serve as a proof-of-principle example. Analysis of one of the SPS quality metrics derived from efficient histogram fitting of the synthetic samples, i.e. the probability of multi-photon emission events, reveals significant uncertainty contributed by stochastic variability in the Poisson processes that describe detection rates. Ignoring this source of error risks severe overconfidence in both early quality estimates and claims for state-of-the-art SPS devices. Additionally, this study finds that standard least-squares fitting is comparable to using a Poisson likelihood, and expanding averages show some promise for early estimation. Also, reducing background counts improves fitting accuracy but does not address the Poisson-process variability. Ultimately, data augmentation demonstrates its value in supplementing physical experiments; its benefit here is to emphasise the need for a cautious assessment of SPS quality.
Integrating light emitters based on III-V materials with silicon-based electronics is crucial for further increase in data transfer rates in communication systems since the indirect bandgap of ...silicon prevents its direct use as a light source. We investigate here InAs/InGaAlAs quantum dot (QD) structures grown directly on 5{\deg} off-cut Si substrate and emitting light at 1.5 micrometers, compatible with established telecom platform. Using different dislocation defects filtering layers, exploiting strained superlattices and supplementary QD layers, we mitigate the effects of lattice constant and thermal expansion mismatches between III-V materials and Si during growth. Complementary optical spectroscopy techniques, i.e. photoreflectance and temperature-, time- and polarization- resolved photoluminescence, allow us to determine the optical quality and application potential of the obtained structures by comparing them to a reference sample -- state-of-the-art QDs grown on InP. Experimental findings are supported by calculations of excitonic states and optical transitions by combining multiband k.p and configuration-interaction methods. We show that our design of structures prevents the generation of a considerable density of defects, as intended. The emission of Si-based structures appears to be much broader than for the reference dots, due to the creation of different QD populations which might be a disadvantage in particular laser applications, however, could be favourable for others, e.g. in broadly tunable devices, sensors, or optical amplifiers. Eventually, we identify the overall most promising combination of defect filtering layers, discuss its advantages and limitations, and prospects for further improvements.
PDF
