We present test results from the “TPAC” and “F
ortis” sensors produced using the 180
nm CMOS INMAPS process. The TPAC sensor has a
50
μ
m
pixel size with advanced in-pixel electronics. Although TPAC ...was developed for digital electromagnetic calorimetry, the technology can be readily extended to tracking and vertexing applications where highly granular pixels with in-pixel intelligence are required. By way of example, a variant of the TPAC sensor has been proposed for the Super
B vertex detector. The F
ortis sensor is a prototype with several pixel variants to study the performance of a four transistors (4T) architecture and is the first sensor of this type tested for particle physics applications. TPAC and F
ortis sensors have been fabricated with some of the processing innovations available in INMAPS such as deep p-wells and high-resistivity epitaxial layers. The performance of these sensor variants has been measured both in the laboratory and at test beams and results showing significant improvements due to these innovations are presented. We have recently manufactured the “C
herwell” sensor, building on the experience with both TPAC and F
ortis and making use of the 4T approach. C
herwell is designed for tracking and vertexing and has an integrated ADC and targets very low-noise performance. The principal features of C
herwell are described.
A proof-of-principle experimental setup for the extraction of 6 GeV electrons from the DESY II Booster Synchrotron using the channeling effect in a bent crystal is elaborated. Various aspects of the ...experimental setup were investigated in detail, such as the particle beam dynamics during the extraction process, the manufacturing and characterization of bent crystals, and the detection of the extracted beam. In order to optimize the crystal geometry, the overall process of beam extraction was simulated, taking into account the influence of radiation energy losses. As result it is concluded that the multi-turn electron beam extraction efficiency can reach up to 16%. In principle this crystal-based beam extraction technique can be applied at any electron synchrotron in order to provide multi-GeV electron beams in a parasitic mode. This technique will allow to supply fixed-target experiments by intense high-quality monoenergetic electron beams. Furthermore, electron/positron crystal-based extraction from future lepton colliders may provide an access to unique experimental conditions for ultra-high energy fixed-target experiments including searches for new physics beyond the Standard Model.
Physics at the e+e- linear collider Moortgat-Pick, G.; Baer, H.; Battaglia, M. ...
The European physical journal. C, Particles and fields,
08/2015, Letnik:
75, Številka:
8
Journal Article
Recenzirano
Odprti dostop
A comprehensive review of physics at an
e
+
e
-
linear collider in the energy range of
s
=
92
GeV–3 TeV is presented in view of recent and expected LHC results, experiments from low-energy as well ...as astroparticle physics. The report focusses in particular on Higgs-boson, top-quark and electroweak precision physics, but also discusses several models of beyond the standard model physics such as supersymmetry, little Higgs models and extra gauge bosons. The connection to cosmology has been analysed as well.
Novel accelerator techniques such as dielectric laser acceleration (DLA) will be studied at the SINBAD facility (DESY Hamburg) using the ARES electron linac. Due to the low charge of the accelerated ...beams, charge densities below 1 aC per square micron are expected at the spectrometer screen, which are challenging to measure with conventional techniques used in multi-pC accelerators. Therefore, a dedicated beam profile monitor, based on silicon strip sensors from the ATLAS inner tracker upgrade, was developed to measure these distributions with a sufficient spatial resolution of around 100 micron. Here, the design of the device and experimental tests with a prototype are presented.
ATLAS has formed strip CMOS project to study the use of CMOS MAPS devices as silicon strip sensors for the Phase-II Strip Tracker Upgrade. This choice of sensors promises several advantages over the ...conventional baseline design, such as better resolution, less material in the tracking volume, and faster construction speed. At the same time, many design features of the sensors are driven by the requirement of minimizing the impact on the rest of the detector. Hence the target devices feature long pixels which are grouped to form a virtual strip with binary-encoded z position. The key performance aspects are radiation hardness compatibility with HL-LHC environment, as well as extraction of the full hit position with full-reticle readout architecture. To date, several test chips have been submitted using two different CMOS technologies. The AMS 350nm is a high voltage CMOS process (HV-CMOS), that features the sensor bias of up to 120V. The TowerJazz 180nm high resistivity CMOS process (HR-CMOS) uses a high resistivity epitaxial layer to provide the depletion region on top of the substrate. We have evaluated passive pixel performance, and charge collection projections. The results strongly support the radiation tolerance of these devices to radiation dose of the HL-LHC in the strip tracker region. We also describe design features for the next chip submission that are motivated by our technology evaluation.
Charge collection in irradiated HV-CMOS detectors Hiti, B.; Affolder, A.; Arndt, K. ...
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment,
04/2019, Letnik:
924, Številka:
C
Journal Article
Recenzirano
Odprti dostop
Active silicon detectors built on p-type substrate are a promising technological solution for large area silicon trackers such as those at the High Luminosity LHC, but the radiation hardness of this ...novel approach has to be evaluated. Active n-in-p strip detector prototypes CHESS2 for ATLAS with different substrate resistivities in the range of 20–1000 Ωcm were irradiated with neutrons and protons up to a fluence of 2×1015neqcm−2 and 3.6×1015neqcm−2. Charge collection in passive test structures on the chip was evaluated using Edge-TCT and minimum ionising electrons from 90Sr. Results were used to assess radiation hardness of the detector in the given fluence range and to determine parameters of initial acceptor removal in different substrates.
•Irradiated samples of different initial resistivity between 20 and a few 1000 Ω cm.•Characterisation with edge transient current technique and 90Sr beta electrons.•Sensitive region increases after irradiation due to acceptor removal.•Parameters of acceptor removal estimated for neutron irradiation.•After proton irradiation larger sensitive region than after neutron irradiation.
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