Utilizing spin‐orbit torque (SOT) to switch a magnetic moment provides a promising route for low‐power‐dissipation spintronic devices. Here, the SOT switching of a nearly compensated ferrimagnet ...Gdx(FeCo)1−x by the topological insulator Bi2Se3 and (BiSb)2Te3 is investigated at room temperature. The switching current density of (BiSb)2Te3 (1.20 × 105 A cm−2) is more than one order of magnitude smaller than that in conventional heavy‐metal‐based structures, which indicates the ultrahigh efficiency of charge‐spin conversion (>1) in topological surface states. By tuning the net magnetic moment of Gdx(FeCo)1−x via changing the composition, the SOT efficiency has a significant enhancement (6.5 times) near the magnetic compensation point, and at the same time the switching speed can be as fast as several picoseconds. Combining the topological surface states and the nearly compensated ferrimagnets provides a promising route for practical energy‐efficient and high‐speed spintronic devices.
Spin‐momentum locking in topological surface states promises ultrahigh spin‐orbit torque efficiency compared to bulk spin‐orbit coupling, where the energy dissipation can be reduced by one to two orders of magnitude. At the same time, near the magnetic compensation point of ferrimagnets, the spin‐orbit torque efficiency can be significantly enhanced.
Abstract
Two-dimensional (2D) ferromagnetic materials with unique magnetic properties have great potential for next-generation spintronic devices with high flexibility, easy controllability, and high ...heretointegrability. However, realizing magnetic switching with low power consumption at room temperature is challenging. Here, we demonstrate the room-temperature spin-orbit torque (SOT) driven magnetization switching in an all-van der Waals (vdW) heterostructure using an optimized epitaxial growth approach. The topological insulator Bi
2
Te
3
not only raises the Curie temperature of Fe
3
GeTe
2
(FGT) through interfacial exchange coupling but also works as a spin current source allowing the FGT to switch at a low current density of ~2.2×10
6
A/cm
2
. The SOT efficiency is ~2.69, measured at room temperature. The temperature and thickness-dependent SOT efficiency prove that the larger SOT in our system mainly originates from the nontrivial topological origin of the heterostructure. Our experiments enable an all-vdW SOT structure and provides a solid foundation for the implementation of room-temperature all-vdW spintronic devices in the future.
It is prevailingly thought that estrogen signaling is not involved in development of estrogen receptor (ER)-negative breast cancer. However, there is evidence indicating that ovariectomy prevents the ...development of both ER-positive and -negative breast cancer, suggesting that estrogen signaling is involved in the development of ER-negative breast cancer. Previously, our laboratory cloned a variant of ER-α, ER-α36, and found that ER-α36 mediated nongenomic estrogen signaling and is highly expressed in ER-negative breast cancer cells. In this study, we found that ER-α36 was highly expressed in 10/12 cases of triple-negative breast cancer. We investigated the role of mitogenic estrogen signaling mediated by ER-α36 in malignant growth of triple-negative breast cancer MDA-MB-231 and MDA-MB-436 cells that express high levels of ER-α36 and found that these cells strongly responded to mitogenic estrogen signaling both in vitro and in vivo. Knockdown of ER-α36 expression in these cells using the small hairpin RNA method diminished their responsiveness to estrogen. ER-α36 physically interacted with the EGFR/Src/Shc complex and mediated estrogen-induced phosphorylation of epidermal growth factor receptor (EGFR) and Src. EGFR signaling activated ER-α36 transcription through an AP1 site in the ER-α36 promoter, and ER-α36 expression was able to stabilize EGFR protein. Our results, thus demonstrated that ER-α36 mediates nongenomic estrogen signaling through the EGFR/Src/ERK signaling pathway in ER-negative breast cancer cells and suggested that a subset of ER-negative breast tumors that expresses ER-α36, retains responsiveness to mitogenic estrogen signaling.
Spin-transfer-torque magnetic random access memory (STT-MRAM) attracts extensive attentions due to its non-volatility, high density and low power consumption. The core device in STT-MRAM is ...CoFeB/MgO-based magnetic tunnel junction (MTJ), which possesses a high tunnel magnetoresistance ratio as well as a large value of perpendicular magnetic anisotropy (PMA). It has been experimentally proven that a capping layer coating on CoFeB layer is essential to obtain a strong PMA. However, the physical mechanism of such effect remains unclear. In this paper, we investigate the origin of the PMA in MgO/CoFe/metallic capping layer structures by using a first-principles computation scheme. The trend of PMA variation with different capping materials agrees well with experimental results. We find that interfacial PMA in the three-layer structures comes from both the MgO/CoFe and CoFe/capping layer interfaces, which can be analyzed separately. Furthermore, the PMAs in the CoFe/capping layer interfaces are analyzed through resolving the magnetic anisotropy energy by layer and orbital. The variation of PMA with different capping materials is attributed to the different hybridizations of both d and p orbitals via spin-orbit coupling. This work can significantly benefit the research and development of nanoscale STT-MRAM.
Microwave detectors based on the spin-torque diode effect are among the key emerging spintronic devices. By utilizing the spin of electrons in addition to charge, they have the potential to overcome ...the theoretical performance limits of their semiconductor (Schottky) counterparts. However, so far, practical implementations of spin-diode microwave detectors have been limited by the necessity to apply a magnetic field. Here, we demonstrate nanoscale magnetic tunnel junction microwave detectors, exhibiting high-detection sensitivity of 75,400 mV mW(-1) at room temperature without any external bias fields, and for low-input power (micro-Watts or lower). This sensitivity is significantly larger than both state-of-the-art Schottky diode detectors and existing spintronic diodes. Micromagnetic simulations and measurements reveal the essential role of injection locking to achieve this sensitivity performance. This mechanism may provide a pathway to enable further performance improvement of spin-torque diode microwave detectors.
We demonstrate that the energy bandgap of layered, high‐dielectric α‐MoO3 can be reduced to values viable for the fabrication of 2D electronic devices. This is achieved through embedding Coulomb ...charges within the high dielectric media, advantageously limiting charge scattering. As a result, devices with α‐MoO3 of ∼11 nm thickness and carrier mobilities larger than 1100 cm2 V−1 s−1 are obtained.
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