Given that Campaign 16 of the K2 mission is one of just two K2 campaigns observed so far in "forward-facing" mode, which enables immediate follow-up observations from the ground, we present a catalog ...of interesting targets identified through photometry alone. Our catalog includes 30 high-quality planet candidates (showing no signs of being non-planetary in nature), 48 more ambiguous events that may be either planets or false positives, 164 eclipsing binaries, and 231 other regularly periodic variable sources. We have released light curves for all targets in C16, and have also released system parameters and transit vetting plots for all interesting candidates identified in this paper. Of particular interest is a candidate planet orbiting the bright F dwarf HD 73344 (V=6.9, K=5.6) with an orbital period of 15 days. If confirmed, this object would correspond to a \(2.56 \pm 0.18 \ R_\oplus\) planet and would likely be a favorable target for radial velocity characterization. This paper is intended as a rapid release of planet candidates, eclipsing binaries and other interesting periodic variables to maximize the scientific yield of this campaign, and as a test run for the upcoming TESS mission, whose frequent data releases call for similarly rapid candidate identification and efficient follow-up.
Use of boron and arsenic diffusions through an emitter polysilicon film (borosenic-poly emitter-base process) produces a transistor base width of less than 100nm with an emitter junction depth of 50 ...nm and an emitter-to-base reverse leakage current of approximately 70 pA. The borosenic-poly process resolves both the channeling and shadowing effects of a sidewall-oxided spacer during the base boron implantation. The process also minimizes crystal defects generated during the emitter and base implantations. The coupling-base boron implant significantly improves a wide variation in the emitter-to-collector periphery punchthrough voltage without degrading the emitter-to-base breakdown voltage current gain, cutoff frequency, or ECL gate delay time. A deep trench isolation with 4- mu m depth and 1.2- mu m width reduces the collector-to-substrate capacitance to 9 fF, while maintaining a transistor-to-transistor isolation voltage of greater than 25 V. The application of self-aligned titanium silicide technology to form polysilicon resistors without holes and to reduce the sheet resistance of the emitter and collector polysilicon electrodes to 1 Omega /square is discussed.< >
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