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  • Growth of III-nitrides via sublimation and metalorganic vapor phase epitaxy = Rast III-nitridov s sublimacijo in metalorgansko parno fazno epitaksijo
    Davis, Robert F. ...
    Single crystals of GaN < 3 mm in length were grown by sublimation/recondensation of GaN in 760 Torr ▫$NH_3$▫ at 1100°C. Platelets of AlN < 1 mm thick were similarly grown between 1950 and 2250°C ... using an Al source. Monocrystalline GaN and ▫$Al_xGa_{1-x}N$▫(0001)(0.05 < x < 0.96) films were grown via MOVPE on an ▫$\alpha$▫(6H)-SiC(0001) wafers with and without, respectively, a 1000 Å AlN buffer layer. Photoluminiscence (PL) spectra of GaN showed bound and free excitonic recombinations. Selective growth of hexagonal pyramid arrays of undoped GaN and Si-doped GaN was achieved on 6H-SiC(0001)/AlN/GaN multilayer substrates using a patterned ▫$SiO_2$▫ mask. Field emission of these arrays exhibited a turn-on field of 25 V/▫$\mu$▫m for an emission current of 10.8 nA at an anode-to-sample distance of 27 ▫$\mu$▫m. Lateral growth and coalescence of GaN have been achieved using stripes oriented along <1100> at 1100°C and a triethylgallium flow rate of 26 mmol/min. Approximately ▫$10^9$▫ ▫$cm^{-2}$▫ dislocations, originating from the underlying GaN/AlN interface, were contained in the GaN grown in the window regions. The overgrowth regions contained a very low density of dislocations.
    Vir: Kovine zlitine tehnologije = Metals alloys technologies. - ISSN 1318-0010 (Letn. 31, št. 6, 1997, str. 485-494)
    Vrsta gradiva - članek, sestavni del ; neleposlovje za odrasle
    Leto - 1997
    Jezik - angleški
    COBISS.SI-ID - 70314

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