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Shin, Bong Gyu; Han, Gang Hee; Yun, Seok Joon; Oh, Hye Min; Bae, Jung Jun; Song, Young Jae; Park, Chong-Yun; Lee, Young Hee
Advanced materials (Weinheim), November 9, 2016, Letnik: 28, Številka: 42Journal Article
An unusually large bandgap modulation of 1.23–2.65 eV in monolayer MoS2 on a SiO2/Si substrate is found due to the inherent local bending strain induced by the surface roughness of the substrate, reaching the direct‐to‐indirect bandgap transition. Approximately 80% of the surface area reveals an indirect bandgap, which is confirmed further by the degraded photoluminescence compared to that from suspended MoS2.
