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  • Rational Band Gap Engineeri...
    Wang, Fenggong; Di Valentin, Cristiana; Pacchioni, Gianfranco

    ChemCatChem, April 2012, Letnik: 4, Številka: 4
    Journal Article

    A band better than the Beatles? Tungsten oxide doping by hafnium induces a shift of the valence and conduction bands towards higher energies without losing the visible light absorption properties of the material and introducing impurity states in the gap. The new band edges position with respect to the redox potentials for both H2 and O2 evolution is suitable for efficient water splitting.