The design of transparent conductive electrodes (TCEs) for optoelectronic devices requires a trade-off between high conductivity or transmittivity, limiting their efficiency. This paper demonstrates a novel approach to fabricating TCEs that effectively alleviates this trade-off: a monolithic GaAs high contrast grating integrated with metal (metalMHCG). The metalMHCG enables higher electrical conductivity than other TCEs, while providing transmissive and antireflective properties. We focus on infrared spectrum TCEs, which are essential for sensing, thermal imaging, and automotive applications. However, due to elevated free carrier absorption they are much more demanding than TCEs for the visible spectrum. We demonstrate 75% absolute transmittiance of unpolarized light, resulting in 108% transmittance relative to plain GaAs substrate. We achieved even larger absolute transmittance of polarized light, reaching 92% or 133% relative transmittance. Despite record high transmittance, the sheet resistance of the metalMHCG is several times lower than any other TCE, ranging from 0.5 to 1 Ohm/Sq.