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Huang, Yu-Jie; Yu, Cheng-Yeh; Jiang, Zih-Kang; Chen, Yi-Cin; Sun, Ching-Pao; Utila, Masauko Henry; Yeh, Wang-Chi; Lin, Chu-Hsuan
IEEE journal of photovoltaics, 07/2021, Letnik: 11, Številka: 4Journal Article
The negative fixed charge density contributed by graphene oxide is estimated as high as 6 x 10 12 cm −2 . Graphene oxide is therefore a promising candidate for Si solar cell passivation. However, the high-temperature steps for manufacturing commercial Si solar cells would change the composition of graphene oxide. Therefore, graphene oxide cannot be directly adopted by commercial PERC manufacturers with the high-temperature firing step after the rear passivation step. To suppress the high-temperature degradation, we have deposited the graphene oxide on the rear surface of commercial IBC cells directly, and V oc , J sc and efficiency of the cell all improved after 100 μL graphene oxide deposition. Graphene oxide can be adopted as the passivation material of commercial cells as long as the high-temperature process on graphene oxide can be suppressed.
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Dostop do baze podatkov JCR je dovoljen samo uporabnikom iz Slovenije. Vaš trenutni IP-naslov ni na seznamu dovoljenih za dostop, zato je potrebna avtentikacija z ustreznim računom AAI.
Leto | Faktor vpliva | Izdaja | Kategorija | Razvrstitev | ||||
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JCR | SNIP | JCR | SNIP | JCR | SNIP | JCR | SNIP |
Baze podatkov, v katerih je revija indeksirana
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Povezave do osebnih bibliografij avtorjev | Povezave do podatkov o raziskovalcih v sistemu SICRIS |
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Vir: Osebne bibliografije
in: SICRIS
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