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Hilt, Oliver; Bahat Treidel, Eldad; Wolf, Mihaela; Kuring, Carsten; Tetzner, Kornelius; Yazdani, Hossein; Wentzel, Andreas; Würfl, Joachim
IET power electronics, 12/2019, Letnik: 12, Številka: 15Journal Article
Vertical silicon carbide transistors and lateral gallium nitride (GaN) transistors for power-electronic applications currently target applications with different voltage and power ratings. Meanwhile, research and development activities continue on vertical GaN transistors and new gallium oxide (Ga2O3) transistors. What are their perspectives in the application and how do they compete against each other and against established transistor technologies? This study discusses the specific characteristics of lateral and vertical GaN and Ga2O3 transistors to assess their strengths and weaknesses.
