E-viri
Recenzirano
-
Burlakov, I. D.; Filachev, A. M.; Kholodnov, V. A.
Journal of communications technology & electronics, 09/2017, Letnik: 62, Številka: 9Journal Article
The analytical model of avalanche photodiodes based on the different types of p–n structures is discussed. Formulas for avalanche breakdown voltage V BD and the exponent in Miller’s relation for dependence between the carrier multiplication coefficient M and the applied voltage V are derived. The obtained results enable us to avoid time-consuming numerical calculations and develop an analytical method for optimizing the structural parameters of avalanche heterophotodiodes (its principles will be reported in Part II).
