E-viri
Recenzirano
-
Batignani, G.; Bettarini, S.; Borghi, G.; Boscardin, M.; Ciarrocchi, A.; Crivellari, M.; Coletti, C.; Di Gaspare, A.; Di Lieto, A.; Forti, F.; Goretti, D.; Mishra, N.P.; Paoloni, E.; Rizzo, G.; Scherzinger, J.; Tredicucci, A.; Vicarelli, L.; Zorzi, N.
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 08/2019, Letnik: 936Journal Article
We present the first steps to develop radiation sensors based on the graphene field effect transistor technology. Such a sensor exploits the ambipolar behavior of graphene near its Dirac point and it is not dependent on collecting charges, but it senses ionizing radiation trough the change in conductivity of the graphene layer induced by changes of the electric field. We designed the layout of the sensors with the help of Sentaurs TCAD. We simulated static operations and the dynamic response to radiation and calculated the source–drain current through the graphene layer with a quasi-analytical model. The transistors were produced at the National Enterprise for nanoScience and nanoTechnology by depositing high quality graphene on silicon chips manufactured by the Fondazione Bruno Kessler foundry. To reduce the high contact resistance between graphene and aluminum contacts caused by oxidation of the aluminum surface, we used gold/chromium interfaces. We investigated the sensors behavior by mean of electrical measurements, extracting the graphene properties, such as mobility and doping. We observed modulation of the source–drain current, determined the Dirac point and found the optimal voltage levels to be sensitive to pulsed IR laser light and β-particles. •Investigation of n-doped substrate as base to develop graphene-based pixel sensors.•Design and production of GFET pixel sensor for the detection of MIPs.•Simulation of static operations and the dynamic response with Sentaurus TCAD.•Identification of technology challenges and incompatibilities.•Replacement of standard aluminum contacts with gold contacts.
Avtor
![loading ... loading ...](themes/default/img/ajax-loading.gif)
Vnos na polico
Trajna povezava
- URL:
Faktor vpliva
Dostop do baze podatkov JCR je dovoljen samo uporabnikom iz Slovenije. Vaš trenutni IP-naslov ni na seznamu dovoljenih za dostop, zato je potrebna avtentikacija z ustreznim računom AAI.
Leto | Faktor vpliva | Izdaja | Kategorija | Razvrstitev | ||||
---|---|---|---|---|---|---|---|---|
JCR | SNIP | JCR | SNIP | JCR | SNIP | JCR | SNIP |
Baze podatkov, v katerih je revija indeksirana
Ime baze podatkov | Področje | Leto |
---|
Povezave do osebnih bibliografij avtorjev | Povezave do podatkov o raziskovalcih v sistemu SICRIS |
---|
Vir: Osebne bibliografije
in: SICRIS
To gradivo vam je dostopno v celotnem besedilu. Če kljub temu želite naročiti gradivo, kliknite gumb Nadaljuj.