This paper presents a novel single-switch discontinuous current-source gate driver (CSD) with voltage boosting capability appropriate for ultra-low voltage applications. The power MOSFET gate current using this CSD does not deviate during both turn-on and turn-off transitions. Thus, in comparison to the previous CSDs, the effective gate current is much higher and nearly constant during switching transitions, which would reduce both turn-on and turn-off transient intervals and consequently the switching losses. Other advantages of this CSD are low number of components, high Cdv/dt immunity and the ability to increase the gate-source voltage to more than the gate-drive source voltage which reduces the <inline-formula><tex-math notation="LaTeX">\mathbf {R_{DS(on)}}</tex-math></inline-formula> (drain-source on-resistance). The power MOSFET fast transition intervals and low <inline-formula><tex-math notation="LaTeX">\mathbf {R_{DS(on)}}</tex-math></inline-formula> have contributed to improved efficiency. The proposed CSD is analyzed and theoretical analysis is verified by the stimulation and experimental results at 1MHz.