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  • Magnetization switching thr...
    Fan, Yabin; Upadhyaya, Pramey; Kou, Xufeng; Lang, Murong; Takei, So; Wang, Zhenxing; Tang, Jianshi; He, Liang; Chang, Li-Te; Montazeri, Mohammad; Yu, Guoqiang; Jiang, Wanjun; Nie, Tianxiao; Schwartz, Robert N; Tserkovnyak, Yaroslav; Wang, Kang L

    Nature materials, 07/2014, Letnik: 13, Številka: 7
    Journal Article

    Recent demonstrations of magnetization switching induced by in-plane current in heavy metal/ferromagnetic heterostructures (HMFHs) have drawn great attention to spin torques arising from large spin-orbit coupling (SOC). Given the intrinsic strong SOC, topological insulators (TIs) are expected to be promising candidates for exploring spin-orbit torque (SOT)-related physics. Here we demonstrate experimentally the magnetization switching through giant SOT induced by an in-plane current in a chromium-doped TI bilayer heterostructure. The critical current density required for switching is below 8.9 × 10(4) A cm(-2) at 1.9 K. Moreover, the SOT is calibrated by measuring the effective spin-orbit field using second-harmonic methods. The effective field to current ratio and the spin-Hall angle tangent are almost three orders of magnitude larger than those reported for HMFHs. The giant SOT and efficient current-induced magnetization switching exhibited by the bilayer heterostructure may lead to innovative spintronics applications such as ultralow power dissipation memory and logic devices.