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Bertuccio, G.; Ahangarianabhari, M.; Graziani, C.; Macera, D.; Shi, Y.; Gandola, M.; Rachevski, A.; Rashevskaya, I.; Vacchi, A.; Zampa, G.; Zampa, N.; Bellutti, P.; Giacomini, G.; Picciotto, A.; Piemonte, C.; Zorzi, N.
IEEE transactions on nuclear science, 2016-Feb., 2016-2-00, 20160201, Letnik: 63, Številka: 1Journal Article
We present a spectroscopic system constituted by a Silicon Drift Detector (SDD) coupled to a CMOS charge sensitive preamplifier, named SIRIO, specifically designed to reach ultimate low noise levels. The SDD, with an active area of 13 mm 2 , has been manufactured by optimizing the production processes in order to reduce the anode current, successfully reaching current densities between 17 pA/cm 2 and 25 pA/cm 2 at + 20 ° C for drift fields ranging from 100 V/cm to 500 V/cm. The preamplifier shows minimum intrinsic noise levels of 1.27 and 1.0 electrons r.m.s. at +20 ° C and -30 ° C, respectively. At room temperature (+ 20 ° C) the 55 Fe 5.9 keV and the pulser lines have 136 eV and 64 eV FWHM, respectively, corresponding to an equivalent noise charge of 7.4 electrons r.m.s.; the noise threshold is at 165 eV. The energy resolution, as measured on the pulser line, ranges from 82 eV FWHM (9.4 electrons r.m.s.) at + 30 ° C down to 29 eV FWHM (3.3 electrons r.m.s.) at - 30 ° C.
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JCR | SNIP | JCR | SNIP | JCR | SNIP | JCR | SNIP |
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