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Leitao Liu; Kumar, S. B.; Yijian Ouyang; Jing Guo
IEEE transactions on electron devices, 09/2011, Letnik: 58, Številka: 9Journal Article
The performance limits of monolayer transition metal dichalcogenide ( MX 2 ) transistors are examined with a ballistic MOSFET model. Using an ab initio theory, we calculate the band structures of 2-D transition MX 2 . We find the lattice structures of monolayer MX 2 remain the same as the bulk MX 2 . Within the ballistic regime, the performances of monolayer MX 2 transistors are better compared with those of the silicon transistors if a thin high-κ gate insulator is used. This makes monolayer MX 2 promising 2-D materials for future nanoelectronic device applications.
