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Kass, R.; Alam, M.S.; Alexander, J.P.; Anastassov, A.; Arndt, K.; Bean, A.; Blanc, F.; Boyd, G.; Brandenburg, G.W.; Cherwinka, J.W.; Duboscq, J.E.; Eckhart, E.; Ershov, A.; Fast, J.; Foland, A.D.; Hopman, P.I.; Gan, K.K.; Gao, Y.; Kagan, H.P.; Kane, S.; Kazkaz, L.; Kim, D.; Lee, J.; Magerkurth, A.J.; Miller, D.; Miyamoto, J.; Neustadt, M.; Oliver, J.; Pavlunin, V.; Rush, C.; Selby, T.; Severini, H.; Shipsey, I.; Skubic, P.; Smith, T.; Sterner, P.; Timm, S.; von Toerne, E.; Tournear, D.; Ward, C.W.; Zhang, Q.; Zhao, X.; Zoeller, M.M.
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 03/2003, Letnik: 501, Številka: 1Journal Article
The design and operation of the CLEO III silicon vertex detector is described in this report. This detector consists of four layers of double-sided silicon wafers covering 93% of the solid angle. After initially meeting its signal-to-noise and spatial resolution design goals, the r− φ side efficiency of layers 1 and 2 decreased dramatically due to radiation-induced sensor effects.
