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Niedernostheide, Franz-Josef; Schulze, Hans-Joachim; Laska, Thomas; Philippou, Alexander
IET power electronics, 04/2018, Letnik: 11, Številka: 4Journal Article
Recent progress in insulated gate bipolar transistor (IGBT) development is reviewed. Highlighted issues range from technological aspects such as special processes suitable for thin-wafer-processing, through the advanced cell and vertical concepts to approaches for improved IGBT ruggedness. Latest advancements regarding thermal management in both modules and discrete chips are also addressed.
