2D transition metal chalcogenide (TMDC) materials, such as MoS2, have recently attracted considerable research interest in the context of their use in ultrascaled devices owing to their excellent electronic properties. Microprocessors and neural network circuits based on MoS2 have been developed at a large scale but still do not have an advantage over silicon in terms of their integrated density. In this study, the current structures, contact engineering, and doping methods for 2D TMDC materials for the scaling‐down process and performance optimization are reviewed. Devices are introduced according to a new mechanism to provide the comprehensive prospects for the use of MoS2 beyond the traditional complementary–metal–oxide semiconductor in order to summarize obstacles to the goal of developing high‐density and low‐power integrated circuits (ICs). Finally, prospects for the use of MoS2 in large‐scale ICs from the perspectives of the material, system performance, and application to nonlogic functionalities such as sensor circuits and analogous circuits, are briefly analyzed. The latter issue is along the direction of “more than Moore” research. 2D materials show great potential to enable the transistor scaling down below 1 nm node. This review focuses on the introduction of the optimization of 2D materials‐based transistor, new mechanisms, design flow, and circuits, which indicate the trend of 2D transistors toward very large‐scale integrated circuits.