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Pan, Y; Wu, D; Angevaare, J R; Luigjes, H; Frantzeskakis, E; Jong, N de; Heumen, E van; Bay, T V; Zwartsenberg, B; Huang, Y K; Snelder, M; Brinkman, A; Golden, M S; Visser, A de
New journal of physics, 12/2014, Letnik: 16, Številka: 12Journal Article
In 3D topological insulators achieving a genuine bulk-insulating state is an important research topic. Recently, the material system (Bi,Sb)2(Te,Se)3 (BSTS) has been proposed as a topological insulator with high resistivity and a low carrier concentration (Ren et al 2011 Phys. Rev. B 84 165311). Here we present a study to further refine the bulk-insulating properties of BSTS. We have synthesized BSTS single crystals with compositions around x = 0.5 and y = 1.3. Resistance and Hall effect measurements show high resistivity and record low bulk carrier density for the composition Bi Sb Te Se . The analysis of the resistance measured for crystals with different thicknesses within a parallel resistor model shows that the surface contribution to the electrical transport amounts to 97% when the sample thickness is reduced to 1 m. The magnetoconductance of exfoliated BSTS nanoflakes shows 2D weak antilocalization with as expected for transport dominated by topological surface states.
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JCR | SNIP | JCR | SNIP | JCR | SNIP | JCR | SNIP |
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