Precisely Controlled Ultrastrong Photoinduced Doping at Graphene-Heterostructures Assisted by Trap-State-Mediated Charge Transfer

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Precisely Controlled Ultrastrong Photoinduced Doping at Graphene-Heterostructures Assisted by Trap-State-Mediated Charge Transfer

Ho, Po-Hsun; Chen, Chun-Hsiang; Shih, Fu-Yu; Chang, Yih-Ren; Li, Shao-Sian; Wang, Wei-Hua; Shih, Min-Chuan; Chen, Wei-Ting; Chiu, Ya-Ping; Li, Min-Ken; Shih, Yi-Siang; Chen, Chun-Wei

Advanced materials (Weinheim), December 16, 2015, Letnik: 27, Številka: 47

Journal Article

Ultrastrong and precisely controllable n‐type photoinduced doping at a graphene/TiOx heterostructure as a result of trap‐state‐mediated charge transfer is demonstrated, which is much higher than any other reported photodoping techniques. Based on the strong light–matter interactions at the graphene/TiOx heterostructure, precisely controlled photoinduced bandgap opening of a bilayer graphene device is demonstrated.

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Leto	Faktor vpliva		Izdaja		Kategorija		Razvrstitev
Leto	JCR	SNIP	JCR	SNIP	JCR	SNIP	JCR	SNIP

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