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Chen, Zhihong; Appenzeller, Joerg; Lin, Yu-Ming; Sippel-Oakley, Jennifer; Rinzler, Andrew G; Tang, Jinyao; Wind, Shalom J; Solomon, Paul M; Avouris, Phaedon
Science (American Association for the Advancement of Science), 03/2006, Letnik: 311, Številka: 5768Journal Article
Single-walled carbon nanotubes (SWCNTs) have been shown to exhibit excellent electrical properties, such as ballistic transport over several hundred nanometers at room temperature. Field-effect transistors (FETs) made from individual tubes show dc performance specifications rivaling those of state-of-the-art silicon devices. An important next step is the fabrication of integrated circuits on SWCNTs to study the high-frequency ac capabilities of SWCNTs. We built a five-stage ring oscillator that comprises, in total, 12 FETs side by side along the length of an individual carbon nanotube. A complementary metal-oxide semiconductor-type architecture was achieved by adjusting the gate work functions of the individual p-type and n-type FETs used.
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JCR | SNIP | JCR | SNIP | JCR | SNIP | JCR | SNIP |
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in: SICRIS
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