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  • Metal‐Perturbed Multiresona...
    Wang, Junjie; Li, Nengquan; Zhong, Cheng; Miao, Jingsheng; Huang, Zhongyan; Yu, Mingxin; Hu, Yu Xuan; Luo, Sai; Zou, Yang; Li, Kai; Yang, Chuluo

    Advanced materials (Weinheim), 02/2023, Letnik: 35, Številka: 6
    Journal Article

    Multiresonance (MR)‐induced thermally activated delayed fluorescence (TADF) emitters based on B‐ and N‐embedded polycyclic aromatics are desirable for ultrahigh‐definition organic light‐emitting diodes (OLEDs) due to their high photoluminescence quantum yield (PLQY) and narrow bandwidth. But the reverse intersystem crossing (RISC) rates of MR‐TADF emitters are usually small, resulting in severe device efficiency roll‐off at high brightness. To solve this issue, a sensitizer for the MR‐TADF emitter has been required. Herein, a new MR‐TADF emitter is developed through coordination of Au with B/N‐embedded polycyclic ligand. Benefitting from the Au perturbation, the RISC rate is dramatically accelerated to 2.3 × 107 s−1, leading to delayed fluorescence lifetime as short as 4.3 µs. Meanwhile, the PLQY of 95% and full width at half maximum of 39 nm (0.18 eV) are essentially unchanged after metal coordination. Therefore, a high PLQY, short delayed fluorescence lifetime, and high color purity are concurrently realized in a single TADF emitter. Accordingly, vacuum‐deposited OLEDs exhibit high‐performance electroluminescence with a maximum external quantum efficiency (EQE) of 35.8% without sensitization. The EQE is maintained as high as 32.3% at 10 000 cd m−2. Furthermore, solution‐processed OLED based on the emitter also achieves excellent performance with a maximum EQE of 25.7% and a small efficiency roll‐off. A metal‐perturbation approach is developed for boosting the reverse intersystem crossing rate of multiresonance type B–N molecule by utilizing the spin–orbit coupling effect of a gold atom. The resultant emitter exhibits a short‐lived thermally activated delayed fluorescence, which enables the fabrication of high‐performance nonsensitized organic light‐emitting diode with a high external quantum efficiency, little efficiency roll‐off, and good color purity.