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Fetisov, Leonid; Chashin, Dmitri; Saveliev, Dmitri; Plekhanova, Daria; Makarova, Ludmila; Stognii, Alexandr
EPJ Web of Conferences, 01/2018, Letnik: 185Journal Article, Conference Proceeding
The results of magnetoelectric effect experimental studies in two different structures based on piezoelectric semiconductor gallium arsenide are presented. The monolithic structure consisted of a gallium arsenide substrate with deposited nickel layer (GaAs-Ni), and the composite structure contained a semiconductor substrate with an amorphous magnetic alloy (GaAs-Metglas) ribbon glued on one side. A quality factor Q ≈ 23500 and magnetoelectric coefficient of 316 V/Oe.cm were achieved at the frequency of planar acoustic oscillations for GaAs-Ni structure at room temperature.
