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Yang, Yifei; Xu, Mingkun; Jia, Shujing; Wang, Bolun; Xu, Lujie; Wang, Xinxin; Liu, Huan; Liu, Yuanshuang; Guo, Yuzheng; Wang, Lidan; Duan, Shukai; Liu, Kai; Zhu, Min; Pei, Jing; Duan, Wenrui; Liu, Dameng; Li, Huanglong
Nature communications, 10/2021, Letnik: 12, Številka: 1Journal Article
Abstract The development of the resistive switching cross-point array as the next-generation platform for high-density storage, in-memory computing and neuromorphic computing heavily relies on the improvement of the two component devices, volatile selector and nonvolatile memory, which have distinct operating current requirements. The perennial current-volatility dilemma that has been widely faced in various device implementations remains a major bottleneck. Here, we show that the device based on electrochemically active, low-thermal conductivity and low-melting temperature semiconducting tellurium filament can solve this dilemma, being able to function as either selector or memory in respective desired current ranges. Furthermore, we demonstrate one-selector-one-resistor behavior in a tandem of two identical Te-based devices, indicating the potential of Te-based device as a universal array building block. These nonconventional phenomena can be understood from a combination of unique electrical-thermal properties in Te. Preliminary device optimization efforts also indicate large and unique design space for Te-based resistive switching devices.
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in: SICRIS
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