Growth by MBE of the dilute-magnetic alloy GaMnN is reported. The Mn concentration, as determined by AES, is linear with increasing Mn-cell temperature up to approximately 43 at.% Mn. No second phases are observed for Mn levels below 9 at.%. The cubic-phase Mn4N is the thermodynamically stable phase at the growth conditions used to produce GaMnN. Hysteresis in M versus H is observed in both GaMnN and GaMnN:C grown on both sapphire and MOCVD GaN at several growth temperatures. Magnetotransport results show the anomalous Hall effect, negative magnetoresistance, and magnetic hysteresis, indicating that Mn is incorporating into the GaN and forming the ferromagnetic-semiconductor GaMnN. Roomtemperature hysteresis is obtained in magnetization measurements with an optimum Mn concentration of approximately 3 at.%. 26 refs.